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oxidation of 4H-silicon carbide using the afterglow method

Thermal oxidation of 4H-silicon carbide using the afterglow methodHoff, A MOborina, ESaddow, S ESavtchouk, AHoff, A.M., et al., Thermal

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A method for manufacturing a silicon carbide single crystal includes: packing a silicon carbide source material into a crucible, the silicon carbide source

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Method for growing low defect density silicon carbide

PURPOSE: A method for manufacturing silicon carbide nanofiber using an emulsion electro-spinning method and the silicon carbide nanofiber manufactured by the

Silicon carbide nanofiber and fabrication method of silicon

Silicon carbide nanofiber and fabrication method of silicon carbide nanofiber using emulsion spinning on ResearchGate, the professional network for scientists

Method for etching of silicon carbide semiconductor using

Method for etching of silicon carbide semiconductor using selective etching of different conductivity typesA method for selective conductivity etching of a

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Reinforcement of porcelain crowns with silicon carbide fibers

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Arshad, M.; Zafar, Y.; Asad, S., 2013: Silicon carbide whisker-mediated transformation of cotton (Gossypium hirsutum L.) Silicon carbide whisker-medi

Poly(ε-caprolactone) and Surface-Modified Silicon Carbide

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Method of making transistor topologies in silicon carbide

Method of making transistor topologies in silicon carbide through the use of selective epitaxyA method of making vertical diodes and transistors in SiC is

OpenGate buys Saint-Gobains silicon carbide unit - PE Hub

2019515-Fiven provides Silicon Carbide grains and powder that are used in Julien Lagrèze, OpenGate Capital’s Partner based in Paris, stated,

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of Carbon–Vacancy Structures in Silicon Carbide during

The mechanism of formation of carbon-vacancy structures in silicon carbide SiC from silicon vacancies that inevitably form during synthesizing SiC