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of defects in silicon carbide homoepitaxial wafer -

2019516-IEC63068-Edition1.0019-01INTERNATIONALSTANDARDSemiconductordevices–Non-destructiverecognitioncriteriaofdefectsinsiliconcarbidehomoepitaxial

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This method of producing a SiC epitaxial wafer having an epitaxial layer For example, compared to silicon (Si), the dielectric breakdown field is

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