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The use of hexamethyldisiloxane (HMDSO) as an for increased device performance and cost reductionp-type microcrystalline silicon oxycarbide layers

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Silicon carbide thin films were grown by low pressure chemical vapor deposition using hexamethyldisilane Me3SiSiMe3 as the single-source precursor

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【PDF】hexamethyldisiloxane for p-type microcrystalline silicon

hexamethyldisiloxane for p-type microcrystalline silicon oxycarbide layers provides a great opportunity for increased device performance and cost

for hydrogenated amorphous silicon carbide and silicon

We report on the preparation of hydrogenated amorphous silicon carbide (a-SiC:H) film and silicon carbonitride (a-SiCN:H) film on Si (100) substrate

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