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THEMIS and ATLAS are, respectively, controller and push pull driver stages of power | Article from Product News Network November 18, 2010

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Radiation Response of Silicon Carbide Diodes and Transistors

Radiation Response of Silicon Carbide Diodes and Transistors By Takeshi The power-law dependence comes from the generation mechanism of interface

Utility-Scale Silicon Carbide Power Transistors: 15 kV SiC

OSTI.GOV Program Document: Utility-Scale Silicon Carbide Power Transistors: 15 kV SiC IGBT Power Modules for Grid Scale Power Conversion

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2009413-Transistors made of silicon carbide, as developed in a research collaboration of Siemens and Russian scientists, manage to concentrate five

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SiliconCarbide (SiC) semiconductor elements (SiC) Silicone carbide (SiC)modules - Powerex and Mitsubishi

SiC Transistors | Power Electronics

high temperature SiC Junction Transistors as well as a line of rectifiers The power electronics industry has reached the theoretical limit of silicon

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The Web’s Leading Power Electronics News Silicon Carbide Bare Die up to 8000V from DOE Awards to Develop Vertical GaN Transistors

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Online September 2010 ( Static and Dynamic Characterization of High-Speed Silicon Carbide (SiC) Power Transistors Johnson

Silicon carbide - Wikipedia

Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance,

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High Energy Gamma Radiation Effects on Commercially Available Silicon Carbide Power JFET Transistors by Meagan Nicole Black A thesis submitted to the Graduate

IEEE Xplore Abstract - Silicon carbide power transistors for

Silicon Carbide is the promising technology for the applications in high frequency, high voltage, high power and high temperature, principally due to their

MACOM Launches New 55 W GaN on SiC Pulsed Power Transistor |

2014428- The MAGX-000035-045000 is a gold-metalized unmatched GaN on Silicon Carbide RF power transistor optimized for high performance RF applicati

driver for silicon carbide bipolar junction transistors -

titsis, D and Rabkowski, J and Palmer, PR and Nee, HP (2014) A discretized proportional base driver for silicon carbide bipolar junction transistors

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Silicon carbide power transistors for photovoltaic

Silicon Carbide is the promising technology for the applications in high frequency, high voltage, high power and high temperature, principally due to their

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a new 1,500 watt RF power transistor for UHF pulsed radar applications, expanding its industry-leading portfolio of high power silicon carbide transistors

STPSC10H065B-TR 650 V 10A Schottky silicon carbide DPAK ST

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【PDF】SiC Super Junction Transistors Offer Breakthrough High Temp

SiC Super Junction Transistors Offer Breakthrough High Temp Performance provides a 64% power loss reduction over best-in-class silicon counterparts

silicon power transistors: Topics by WorldWideScience.org

Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and

and measurements of silicon carbide power transistors (

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Field Effect Transistors | Silicon Carbide Power Devices

Silicon Carbide Power Devices, pp. 141-197 (2006) No Access Metal-Semiconductor Field Effect Transistors

Comparison of silicon, SiC and GaN power transistor

P. (2016), Comparison of silicon, SiC and GaN power transistor power transistors (HEMT, MOSFET and IGBT) with breakdown voltage ratings

and SPICE Models for Silicon Carbide Junction Transistors

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