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US Patent # 1,025,3431. Silicon carbide single crystal and

201949-A silicon carbide single crystal includes a spiral dislocation. The spiral dislocation includes a L dislocation having a burgers vector defi

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- Method for growing single crystal of silicon carbide -

In feeding a silicon carbide-forming gas generated by a method of heat-subliming silicon carbide or the like to the surface of a seed crystal (2) so

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US Patent # 1,024,9497. Silicon carbide semiconductor device

201942-A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a gate insulating fi

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A method for manufacturing a silicon carbide single crystal includes: packing a silicon carbide source material into a crucible, the silicon carbide source